Investigation of Scattering Mechanism in Nano-Scale Double Gate In0.53Ga0.47As nMOSFETs by a Deterministic BTE Solver

被引：0

作者：

Di, Shaoyan ^{[1
]}

Lun, Zhiyuan ^{[1
]}

Chang, Pengying ^{[1
]}

Shen, Lei ^{[1
]}

Zhao, Kai ^{[1
,4
]}

Lu, Tiao ^{[2
,3
]}

Du, Gang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, IFSA Collaborat Innovat Ctr MoE, CAPT, HEDPS,LMAM, Beijing, Peoples R China

[3] Peking Univ, Sch Math Sci, Beijing, Peoples R China

[4] Beijing Informat Sci & Technol Univ, Sch Informat & Commun, Beijing 100101, Peoples R China

来源：

2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2016年

关键词：

Boltzmann transport equation (BTE); InGaAs; double gate; scattering; MOSFETS; TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

we investigate the scattering mechanism in ultrashort double gate In0.53Ga0.47As nMOSFETs by deterministically solving Boltzmann transport equation (BTE). The intra-valley acoustic phonon scattering, optical phonon scattering, inter-valley optical scattering, polar optical scattering, and surface roughness (SR) scattering are considered. The impacts of scattering on the performance of device under high/low biases are compared. Results show that the ballistic ratio (Iscat/Iball) decreases from 96.8% to 94.5% when the drain bias increases from 0.05V 0.6V, which is mainly caused by the inter-valley scatterings.

引用

页码：193 / 196

页数：4

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