Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures

被引：48
作者：
Asgari, A [1 ]
Kalafi, M
Faraone, L
机构：
[1] Tabriz Univ, Ctr Appl Phys Res, Tabriz 51664163, Iran
[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 03期
关键词：
D O I：
10.1063/1.1635654
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this article we present a study of the effect that partial occupancy of sub-bands on the two-dimensional electron mobility at different temperatures, using a fully numerical calculation in unintentionally doped AlxGa1-xN/GaN heterostructures with different Al mole fraction in the AlxGa1-xN barrier. The analysis of our results clearly indicates that the effect of partial sub-band occupancy be considerable, especially at higher temperatures and higher Al mole fractions when more than one sub-band is occupied. Comparison of our calculated results with published experimental data shows good agreement. (C) 2004 American Institute of Physics.
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页码：1185 / 1190
页数：6
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