Non-Markovian gain of a quantum-well laser with many-body effects

被引:7
作者
Ahn, D
机构
[1] Department of Electrical Engineering, Seoul City University, Tongdaimoon-ku, Seoul 130-743
关键词
D O I
10.1063/1.117719
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical gain of a quantum-well laser is studied taking into account the valence-band mixing, non-Markovian relaxation, and the many-body effects, Plasma screening and excitonic effects are taken into account in the time-dependent Hartree-Fock approximation. Conventional gain spectra calculated with the Lorentzian Line shape function show two erroneous phenomena: unnatural absorption region below the band-gap energy and mismatch of the transparency point in the gain spectra with the Fermi-level separation, the latter suggesting that the carriers and the photons are not in thermal (or quasi) equilibrium. It is shown that the non-Markovian gain model with many-body effects removes the two errors associated with the Lorentzian line shape function with the proper choice of the correlation time. (C) 1996 American Institute of Physics.
引用
收藏
页码:2498 / 2500
页数:3
相关论文
共 21 条
[1]   THEORY OF OPTICAL GAIN IN STRAINED-LAYER QUANTUM-WELLS WITHIN THE 6X6 LUTTINGER-KOHN MODEL [J].
AHN, D ;
YOON, SJ ;
CHUANG, SL ;
CHANG, CS .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2489-2497
[2]  
AHN D, 1995, IEEE J SEL TOP QUANT, V1, P301, DOI 10.1109/2944.401209
[3]   Optical gain of a quantum-well laser with non-markovian relaxation and many-body effects [J].
Ahn, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :960-965
[4]   OPTICAL GAIN IN A STRAINED-LAYER QUANTUM-WELL LASER [J].
AHN, D ;
CHUANG, SL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2400-2406
[5]   TIME-CONVOLUTIONLESS REDUCED-DENSITY OPERATOR-THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR .2. OPTICAL GAIN AND LINE-SHAPE FUNCTION OF A DRIVEN SEMICONDUCTOR [J].
AHN, D .
PHYSICAL REVIEW B, 1995, 51 (04) :2159-2166
[6]   TIME-CONVOLUTIONLESS REDUCED-DENSITY-OPERATOR THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR - QUANTUM KINETIC-EQUATIONS FOR SEMICONDUCTORS [J].
AHN, D .
PHYSICAL REVIEW B, 1994, 50 (12) :8310-8318
[7]   INTRABAND RELAXATION-TIME IN QUANTUM-WELL LASERS [J].
ASADA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) :2019-2026
[8]   DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].
ASADA, M ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442
[9]   MODELING OF STRAINED-QUANTUM-WELL LASERS WITH SPIN-ORBIT-COUPLING [J].
CHANG, CS ;
CHUANG, SL .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :218-229
[10]   MANY-BODY COULOMB EFFECTS IN ROOM-TEMPERATURE II-VI QUANTUM-WELL SEMICONDUCTOR-LASERS [J].
CHOW, WW ;
KOCH, SW .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :3004-3006