Formation of two ripple modes on Si by ion erosion with simultaneous Fe incorporation

被引:12
作者
Cornejo, Marina [1 ]
Ziberi, Bashkim [2 ]
Meinecke, Christoph [1 ]
Frost, Frank [1 ]
机构
[1] Leibniz Inst Oberflachenmodifizierung eV IOM, D-04318 Leipzig, Germany
[2] State Univ Tetova, Fac Math & Nat Sci, Tetova, North Macedonia
关键词
Ion erosion; Self organization; Silicon; Nanostructures; Ripples; PATTERN-FORMATION; ROUGHENING INSTABILITY; DECOMPOSITION; EVOLUTION; BOMBARDMENT; SURFACES;
D O I
10.1016/j.apsusc.2011.05.044
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This report focuses on the self organized nanostructure formation on Si (0 0 1) by erosion with low energy Kr+ ions with simultaneous incorporation of metallic atoms, in particular Fe. The incorporation of Fe is thought to play an important role in the formation of some features. In the experimental set-up used here the Fe atoms come from the sputtering of a cylindrical stainless steel target situated between the source and the sample holder. It is demonstrated how the Fe flux can be regulated by operational parameters of the ion source. It is shown that two different ripple modes, one perpendicular to the ion beam projection on the surface and the other parallel, were formed at near normal incidence (alpha = 20 degrees) with ion energy between 300 eV and 2000 eV and a fluence of 6.7 x 10(18) cm(-2). The perpendicular mode ripples dominated the topography when E-ion = 2000 eV, while the parallel mode ripples were the main features observed when E-ion = 300 eV. The correlation of Fe concentration with ion sources parameters and resulting topography is analyzed. It is demonstrated that a certain Fe concentration is necessary for the formation of ripples that are oriented perpendicular to the ion beam and that the Fe concentration alone does not determine the evolving topography. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:8659 / 8664
页数:6
相关论文
共 45 条
[1]   Time evolution of the local slope during Cu(110) ion sputtering [J].
Boragno, C ;
Buatier, F ;
Costantini, G ;
Molle, A ;
de Sanctis, D ;
Valbusa, U ;
Borgatti, F ;
Felici, R ;
Ferrer, S .
PHYSICAL REVIEW B, 2003, 68 (09)
[2]   Temperature and fluence effects on the evolution of regular surface morphologies on ion-sputtered Si(111) [J].
Brown, AD ;
Erlebacher, J .
PHYSICAL REVIEW B, 2005, 72 (07)
[3]   Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques [J].
Carbone, D. ;
Biermanns, A. ;
Ziberi, B. ;
Frost, F. ;
Plantevin, O. ;
Pietsch, U. ;
Metzger, T. H. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (22)
[4]   ION-BOMBARDMENT INDUCED RIPPLE TOPOGRAPHY ON AMORPHOUS SOLIDS [J].
CARTER, G ;
NOBES, MJ ;
PATON, F ;
WILLIAMS, JS ;
WHITTON, JL .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :65-73
[5]   ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING [J].
CHASON, E ;
MAYER, TM ;
KELLERMAN, BK ;
MCILROY, DT ;
HOWARD, AJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (19) :3040-3043
[7]   Spontaneous pattern formation on ion bombarded Si(001) [J].
Erlebacher, J ;
Aziz, MJ ;
Chason, E ;
Sinclair, MB ;
Floro, JA .
PHYSICAL REVIEW LETTERS, 1999, 82 (11) :2330-2333
[8]   Formation of ordered nanoscale semiconductor dots by ion sputtering [J].
Facsko, S ;
Dekorsy, T ;
Koerdt, C ;
Trappe, C ;
Kurz, H ;
Vogt, A ;
Hartnagel, HL .
SCIENCE, 1999, 285 (5433) :1551-1553
[9]   Evolution of surface topography of fused silica by ion beam sputtering [J].
Flamm, D ;
Frost, F ;
Hirsch, D .
APPLIED SURFACE SCIENCE, 2001, 179 (1-4) :95-101
[10]   Track formation and fabrication of nanostructures with MeV-ion beams [J].
Toulemonde, M ;
Trautmann, C ;
Balanzat, E ;
Hjort, K ;
Weidinger, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 :1-8