Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

被引:132
作者
Heo, Hoseok [1 ,2 ]
Sung, Ji Ho [1 ,2 ]
Jin, Gangtae [1 ,4 ]
Ahn, Ji-Hoon [1 ]
Kim, Kyungwook [1 ,4 ]
Lee, Myoung-Jae [1 ]
Cha, Soonyoung [3 ]
Choi, Hyunyong [3 ]
Jo, Moon-Ho [1 ,2 ,4 ]
机构
[1] Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, 77 Cheongam Ro, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Pohang 790784, South Korea
[3] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
基金
新加坡国家研究基金会;
关键词
2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices; LATERAL HETEROSTRUCTURES; VALLEY POLARIZATION; DIRAC FERMIONS; SURFACE-ENERGY; MOS2; GRAPHENE; ABSORPTION; NANOSHEETS;
D O I
10.1002/adma.201500846
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.
引用
收藏
页码:3803 / 3810
页数:8
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