Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy

被引：54

作者：

Watanabe, K

Tsukamoto, S

Gotoh, Y

Koguchi, N

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[2] Sci Univ Tokyo, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

annealing; low dimensional structures; photoluminescence; quantum dots; molecular beam epitaxy; gallium compounds;

D O I：

10.1016/S0022-0248(01)00991-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated post-annealing effects of photoluminescence (PL) properties in GaAs/AlGaAs QDs fabricated by modified droplet epitaxy. The annealing temperatures were changed between 520 degreesC and 760 degreesC. The PL intensity of QDs: increased drastically with the increase of annealing temperature. The PL intensity of QDs after the annealing at 760 degreesC was enhanced by two orders of magnitude as compared to that of before post-annealing. This sample showed a distinct PL peak even at the room temperature. With the increase of annealing temperatures, the peak energy shifted from 1.646 to 1.749 eV, continuously. These effects may be caused by improving the crystallinity of QDs systems and the size reduction and:or changing the composition of QDs by the post-annealing. (C) 2001 Elsevier Science B,V. All rights reserved.

引用

收藏

页码：1073 / 1077

页数：5

相关论文

共 15 条

[1] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02) :169-179

[2] Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal-organic chemical-vapor deposition [J].

Ishida, S ;

Arakawa, Y ;

Wada, K .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :800-802

[3] NEW SELECTIVE MOLECULAR-BEAM EPITAXIAL-GROWTH METHOD FOR DIRECT FORMATION OF GAAS QUANTUM DOTS [J].

KOGUCHI, N ;

ISHIGE, K ;

TAKAHASHI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :787-790

[4] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].

KOGUCHI, N ;

TAKAHASHI, S ;

CHIKYOW, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692

[5] GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS [J].

KOGUCHI, N ;

ISHIGE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (5A) :2052-2058

[6] Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy [J].

Lee, CD ;

Park, C ;

Lee, HJ ;

Lee, KS ;

Park, SJ ;

Park, CG ;

Noh, SK ;

Koguchi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :7158-7160

[7] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[8] New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy [J].

Mano, T ;

Watanabe, K ;

Tsukamoto, S ;

Fujioka, H ;

Oshima, M ;

Koguchi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1009-L1011

[9] Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates [J].

Nötzel, R ;

Niu, ZC ;

Ramsteiner, M ;

Schönherr, HP ;

Tranpert, A ;

Däweritz, L ;

Ploog, KH .

NATURE, 1998, 392 (6671) :56-59

[10] DETERMINATION OF THE INTERDIFFUSION OF AL AND GA IN UNDOPED (AL,GA)AS/GAAS QUANTUM-WELLS [J].

SCHLESINGER, TE ;

KUECH, T .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :519-521