Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

被引：12

作者：

Ahola-Tuomi, M. ^{[1
]}

Punkkinen, M. P. J. ^{[1
,2
]}

Laukkanen, P. ^{[1
,3
]}

Kuzmin, M. ^{[1
,4
]}

Lang, J. ^{[1
]}

Schulte, K. ^{[5
]}

Pietzsch, A. ^{[5
]}

Perala, R. E. ^{[1
]}

Rasanen, N. ^{[1
]}

Vayrynen, I. J. ^{[1
]}

机构：

[1] Univ Turku, Dept Phys & Astron, FI-20014 Turku, Finland

[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden

[3] Tampere Univ Technol, Optoelect Res Ctr, FI-33101 Tampere, Finland

[4] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] Lund Univ, Max Lab, SE-22100 Lund, Sweden

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 24期

基金：

芬兰科学院;

关键词：

INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; SILICON NANOWIRES; WAVE; SURFACE; ACCUMULATION; GROWTH; SHIFTS; SPIN;

D O I：

10.1103/PhysRevB.83.245401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

引用

页数：8

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