Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

被引：31

作者：

Yonenaga, I ^{[1
]}

机构：

[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 02期

关键词：

D O I：

10.1063/1.1990259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dynamic properties of individual dislocations in nitrogen (N)-doped Czochralski-grown Si crystals with concentrations up to 6x10(15) cm(-3) were investigated at temperatures of 650-950 degrees C using the etch pit technique and compared with such characteristics of N-free Si crystals. The velocity of dislocations in motion in N-doped crystals was revealed to be unaffected by N doping. It was found that the generation of dislocations from a surface scratch was suppressed in N-doped Si and that the critical stress for dislocation generation increased with N concentration, which is interpreted as being due to dislocation immobilization caused by impurity segregation. N doping is concluded to be effective in the promotion of precipitation of oxygen impurity resulting in immobilization of dislocations.

引用

页数：6

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