Normally-off 4H-SiC trench-gate MOSFETs with high mobility

被引：7

作者：

Wu, J. ^{[1
]}

Hu, J. ^{[1
]}

Zhao, J. H. ^{[1
]}

Wang, X. ^{[2
]}

Li, X. ^{[2
]}

Fursin, L. ^{[2
]}

Burke, T. ^{[3
]}

机构：

[1] Rutgers State Univ, SiCLAB, Dept Elect & Comp Engn, Piscataway, NJ 08901 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

[3] US Army TACOM, Warren, MI 48397 USA

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 06期

关键词：

4H-SiC; trench-gate MOSFETs; mobility;

D O I：

10.1016/j.sse.2008.01.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new 4H-SiC trench-gate MOSFET structure with epitaxial buried channel for accumulation-mode operation, has been designed and fabricated, aiming at improving channel electron mobility. Coupled with improved fabrication processes, the MOSFET structure eliminates the need of high dose N+ source implantation. High dose N+ implantation requires high-temperature (>= 1550 degrees C) activation annealing and tends to cause substantial surface roughness, which degrades MOSFET threshold voltage stability and gate oxide reliability. The buried channel is implemented without epitaxial regrowth or accumulation channel implantation. Fabricated MOSFETs subject to ohmic contact rapid thermal annealing at 850 degrees C for 5 min exhibit a high peak field-effect mobility (mu(FE)) of 95 cm(2)/V s at room temperature (25 degrees C) and 255 cm(2)/V s at 200 degrees C with stable normally-off operation from 25 degrees C to 200 degrees C. The dependence of channel mobility and threshold voltage on the buried channel depth is investigated and the optimum range of channel depth is reported. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：909 / 913

页数：5

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