Structural and optical properties of Au-implanted ZnO films

被引:24
作者
Zhang, X. D. [1 ]
Wu, P. [1 ]
Shen, Y. Y. [1 ]
Zhang, L. H. [1 ]
Xue, Y. H. [1 ]
Zhu, F. [1 ]
Zhang, D. C. [1 ]
Liu, C. L. [1 ,2 ]
机构
[1] Tianjin Univ, Sch Sci, Dept Appl Phys, Tianjin 300072, Peoples R China
[2] Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO film; Au ion implantation; Optical properties; RAMAN-SCATTERING; THIN-FILMS; TEMPERATURE-DEPENDENCE; HIGH TRANSMITTANCE; ZINC-OXIDE; PHOTOLUMINESCENCE; LUMINESCENCE; FERROMAGNETISM; ENERGY; GAP;
D O I
10.1016/j.apsusc.2011.08.022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 degrees C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO2. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au-0 is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:151 / 157
页数:7
相关论文
共 49 条
[31]   Optical absorption edge of ZnO thin films: The effect of substrate [J].
Srikant, V ;
Clarke, DR .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6357-6364
[32]   Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition [J].
Tan, ST ;
Chen, BJ ;
Sun, XW ;
Fan, WJ ;
Kwok, HS ;
Zhang, XH ;
Chua, SJ .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
[33]   Investigations of acceptor related photoluminescence from electrodeposited Ag-doped ZnO [J].
Thomas, M. A. ;
Cui, J. B. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
[34]   Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].
Tsukazaki, A ;
Ohtomo, A ;
Onuma, T ;
Ohtani, M ;
Makino, T ;
Sumiya, M ;
Ohtani, K ;
Chichibu, SF ;
Fuke, S ;
Segawa, Y ;
Ohno, H ;
Koinuma, H ;
Kawasaki, M .
NATURE MATERIALS, 2005, 4 (01) :42-46
[35]   Photoluminescence in phosphorous-implanted ZnO films [J].
Vaithianathan, Veeramuthu ;
Hishita, Shunichi ;
Park, Jae Young ;
Kim, Sang Sub .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
[36]  
Vanheusden K, 1996, APPL PHYS LETT, V68, P403, DOI 10.1063/1.116699
[37]   TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].
VARSHNI, YP .
PHYSICA, 1967, 34 (01) :149-&
[38]   Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy [J].
Wang, LJ ;
Giles, NC .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :973-978
[39]   Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering [J].
Wang, X. B. ;
Song, C. ;
Geng, K. W. ;
Zeng, F. ;
Pan, F. .
APPLIED SURFACE SCIENCE, 2007, 253 (16) :6905-6909
[40]   Luminescence and Raman scattering properties of ag-doped ZnO films [J].
Wang, X. B. ;
Song, C. ;
Geng, K. W. ;
Zeng, F. ;
Pan, F. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (23) :4992-4996