Generation and amplification region in resonant-tunneling diodes

被引：0

作者：

Elesin, VF

Melnikov, DV

Podlivaev, AI

机构：

来源：

SEMICONDUCTORS | 1996年 / 30卷 / 04期

关键词：

OSCILLATIONS; DEVICES; GHZ;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current and emitted (absorbed) power of a rf electric field in a resonant-tunneling diode are found as functions of the bias voltage and frequency of the electromagnetic field by solving numerically the nonstationary Schrodinger equation. It is shown that amplification (generation) is possible for voltages in a range substantially above the region of negative differential resistance and that the maximum frequencies are much higher than the values calculated for this region. (C) 1996 American Institute of Physics.

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页码：337 / 339

页数：3

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