Morphology-Tailored Synthesis of PbSe Nanocrystals and Thin Films from Bis[N,N-diisobutyl-N′-(4-nitrobenzoyl)selenoureato]lead(II)

被引:19
作者
Akhtar, Javeed [1 ,2 ]
Malik, Mohammad A. [1 ,2 ]
Stubbs, Stuart K. [3 ,4 ]
O'Brien, Paul [1 ,2 ]
Helliwell, Madeleine [1 ,2 ]
Binks, David J. [3 ,4 ]
机构
[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Ctr Mat Sci, Manchester M13 9PL, Lancs, England
[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[4] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
Lead; Selenium; Nanoparticles; Thin films; Chemical vapor deposition; SINGLE-SOURCE PRECURSORS; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; PBSE/PBSEXS1-X CORE/SHELL; SATURABLE ABSORBERS; CRYSTAL-STRUCTURE; SOLAR-CELLS; MONTE-CARLO; GROWTH; COMPLEXES;
D O I
10.1002/ejic.201100190
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The ligand N,N-diisobutyl-N'-(4-nitrobenzoyl)selenourea (4-NO2-C6H4CONHCSeNiBu2) (1) and its complex {bis[N,N-diisobutyl-N'-(4-nitrobenzoyl)selenoureato]lead(II)} [(4-NO2-C6H4CONHCSeNiBu2) Pb-II] (2) have been synthesized, and their structures determined by single-crystal X-ray methods. Compound 2 was employed as a single-source precursor (SSP) for the deposition of PbSe thin films by aerosol-assisted chemical vapor deposition (AACVD) in the temperature range 250-500 degrees C on glass substrates. The films obtained at low temperature consist of globular-shaped crystallites, whereas at higher temperature (ca. 500 degrees C) wirelike morphologies are dominant. PbSe nanocrystals were also prepared from compound 2 by solution thermolysis at 200-250 degrees C. Photoluminescence (PL) life time measurements based on the time-correlated single-photon-counting (TCSPC) technique showed significantly faster PL decay in as-prepared PbSe nanocrystals relative to previous reports. The purity and elemental composition of the as-deposited PbSe thin films and nanocrystals were determined by energy-dispersive X-ray analysis (EDX).
引用
收藏
页码:2984 / 2990
页数:7
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