Comparative Analysis of Crystal Growth on Earth and on a Space Station for CrSi2 Synthesized from Zn Melt in the Cr-Si-Zn System

被引：0

作者：

Kalashnikov, E. V. ^{[1
,2
]}

Gurin, V. N. ^{[2
]}

Nikanorov, S. P. ^{[2
]}

Nikolaev, V. I. ^{[2
]}

机构：

[1] Moscow State Reg Univ, RU-141014 Mytishchi, Moscow Oblast, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS | 2020年 / 65卷 / 02期

关键词：

MICROGRAVITY;

D O I：

10.1134/S1063784220020061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed crystal growth in "terrestrial" conditions and in conditions on a space station. It is shown that CrSi2 crystals grown from the Zn melt of the Cr-Si-Zn system in zero-gravity conditions exhibit an excess stress comparable with the excess pressure in the melt due to the support reaction on Earth, as well as the Laplace pressure.

引用

页码：199 / 204

页数：6

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