Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films

被引：7

作者：

Du Ahn, Byung ^{[1
]}

Kim, Jong Hoon ^{[1
]}

Kang, Hong Seong ^{[1
]}

Lee, Choong Hee ^{[1
]}

Oh, Sang Hoon ^{[1
]}

Kim, Kyoung Won ^{[2
]}

Jang, Gun-Eik ^{[2
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[2] Chungbuk Natl Univ, Dept Mat Sci & Engn, Cheongju 361763, Chungbuk, South Korea

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 07期

关键词：

zinc oxide; gallium; electrical properties and measurements; structural properties; optical properties;

D O I：

10.1016/j.tsf.2007.03.072

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly conductive and transparent films of Ga-doped ZnO (GZO) have been prepared by pulsed laser deposition using a ZnO target with Ga2O3 dopant of 3 wt.% in content added. Films with resistivity as low as 3.3 x 10(-4) Omega cm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on glass substrate at room temperature. It is shown that a stable resistivity for use in oxidation ambient at high temperature can be attained for the films. The electrical and optical properties, as well as the thermal stability of resistivity, of GZO films were comparable to those of undoped ZnO films. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1382 / 1385

页数：4

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