Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

被引:138
作者
Wierzbowski, Jakob [1 ,2 ,3 ]
Klein, Julian [1 ,2 ,3 ]
Sigger, Florian [1 ,2 ]
Straubinger, Christian [1 ,2 ]
Kremser, Malte [1 ,2 ]
Taniguchi, Takashi [4 ]
Watanabe, Kenji [4 ]
Wurstbauer, Ursula [1 ,2 ,3 ]
Holleitner, Alexander W. [1 ,2 ,3 ]
Kaniber, Michael [1 ,2 ,3 ]
Mueller, Kai [1 ,2 ]
Finley, Jonathan J. [1 ,2 ,3 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany
[2] Tech Univ Munich, Phys Dept, Coulombwall 4, D-85748 Garching, Germany
[3] NIM, Schellingstr 4, D-80799 Munich, Germany
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
VALLEY POLARIZATION; MONOLAYER; COHERENCE; PHOTOLUMINESCENCE; LINEWIDTH; DYNAMICS;
D O I
10.1038/s41598-017-09739-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe2, WSe2 and MoS2 by encapsulation within few nanometre thick hBN. Encapsulation is shown to result in a significant reduction of the 10 K excitonic linewidths down to similar to 3.5 meV for n- MoSe2, similar to 5.0 meV for p-WSe2 and similar to 4.8 meV for n-MoS2. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS2 shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometre thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit.
引用
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页数:6
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