Luminescence properties of nanocrystalline silicon films

被引：17
|
作者：
Ali, AM [1 ]
Inokuma, T [1 ]
Kurata, Y [1 ]
Hasegawa, S [1 ]
机构：
[1] Kanazawa Univ, Fac Technol, Dept Elect, Kanazawa, Ishikawa 9208667, Japan
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2001年 / 15卷 / 1-2期
关键词：
nanocrystalline silicon; luminescence; PECVD; optical properties;
D O I：
10.1016/S0928-4931(01)00259-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline silicon (nc-Si) films deposited by plasma-enhanced chemical vapor deposition exhibited room-ternperature photoluminescence (PL) with two peaks at around 1.8 eV (700 nm) and 2.2-2.3 eV (540-560 nm), The first 1.8-eV peak is related to a quantum size effect and another peak to the SiH-related bonds. The average grain size, [delta], and crystalline volume fraction, rho, decrease with decreasing gas pressure. By contrast, all of the PL peak energy, PL intensity and optical band gap increase. In addition, by increasing the H-2 flow rate, rf power and deposition temperature, it is found that the values of [delta], rho and PL intensity increase and PL peak energy decreases. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：125 / 128
页数：4
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