Cobalt titanium nitride amorphous metal alloys by atomic layer deposition

被引:7
作者
Nam, Taewook [1 ]
Lee, Chang Wan [1 ,2 ]
Cheon, Taehoon [3 ]
Lee, Woo Jae [4 ]
Kim, Soo-Hyun [5 ]
Kwon, Se-Hun [4 ]
Lee, Han-Bo-Ram [6 ]
Kim, Hyungjun [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
[2] Korea Res Inst Chem Technol, Device Mat Res Ctr, Daejeon 34114, South Korea
[3] Daegu Gyeongbuk Inst Sci & Technol, Ctr Core Res Facil, Daegu 42988, South Korea
[4] Pusan Natl Univ, Sch Mat Sci & Engn, Busan 46241, South Korea
[5] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea
[6] Incheon Natl Univ, Dept Mat Sci & Engn, Incheon 22012, South Korea
基金
新加坡国家研究基金会;
关键词
Amorphous metal alloy; Metal-metal nitride alloy; CoTiN; Atomic layer deposition; Interlayer formation; Diffusion barrier; TIN THIN-FILMS; DIFFUSION-BARRIERS; MECHANICAL-PROPERTIES; GROWTH-RATE; CU; COPPER; PHASE; TA; SUPERCONDUCTIVITY; NANOINDENTATION;
D O I
10.1016/j.jallcom.2017.12.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The formation of thin amorphous cobalt titanium nitride (CoTiN) layers was investigated using a supercycle method of atomic layer deposition (ALD). The stoichiometry of the resultant ALD CoTiN films was controlled by changing the ratio of Co and TiN thicknesses. X-ray diffraction analysis and transmission electron microscopy observations showed that the microstructure of the ALD Co and TiN was transformed from polycrystalline to amorphous CoTiN. The stoichiometry of the CoTiN layer was affected by the growth characteristics of ALD Co and TiN on each surface. The results revealed that ALD TiN undergoes nucleation incubation on the ALD Co surface, whereas ALD Co does not undergo nucleation incubation on the ALD TiN surface. The properties of the amorphous CoTiN layers were evaluated by diffusion experiments and mechanical tests. Because of the lack of grain boundaries, the CoTiN efficiently blocks the diffusion of Cu at elevated temperatures and exhibits higher hardness compared with ALD Co. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:684 / 692
页数:9
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