Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer

被引：10
|
作者：
Lundgren, P [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 04期
关键词：
D O I：
10.1063/1.369531
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum, chromium, gold and polycrystalline silicon contacted metal-oxide-silicon devices with ultrathin (similar to 3 nm) thermal oxides have been compared regarding their electrical characteristics. The impact of the gate material on the features of the interface state density displays itself mainly as a change in the passivation dynamics during heat treatment of what appears to be one and the same as-grown dangling bond defect in all cases. (C) 1999 American Institute of Physics. [S0021-8979(99)01104-4].
引用
收藏
页码：2229 / 2232
页数：4
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