Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration

被引：1

作者：

Soydan, Alper Kaan ^{[1
,3
]}

Yuksel, Muhammed Berat ^{[2
,3
]}

Akcakaya, Dilek Isik ^{[2
,3
]}

Kulah, Haluk ^{[1
,2
,3
]}

机构：

[1] Middle East Tech Univ, Micro & Nano Technol Grad Program, Ankara, Turkey

[2] Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey

[3] Middle East Tech Univ, MEMS Res & Applicat Ctr, Ankara, Turkey

来源：

2019 IEEE SENSORS | 2019年

基金：

欧洲研究理事会;

关键词：

through silicon via; electroplating; MEMS resonator; Kelvin measurement; cochlear implant;

D O I：

10.1109/sensors43011.2019.8956828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, development of a wafer level, void free TSV fabrication process flow and feasibility study of TSV integration to MEMS piezoelectric resonator devices have been presented. TSV structures with 100 mu m diameter and 350 mu m depth were copper filled with via sealing and bottom-up electroplating process which is a two-step technique. Four-point Kelvin measurements showed 0.8 m Omega TSV resistance on fabricated TSVs. Furthermore, TSV frames were epoxy bonded to MEMS acoustic transducers, which showed 90% to the resonator signal from the TSV.

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页数：4

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