Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

被引:6
作者
Hsu, Nai-Wen [1 ]
Hou, Wei-Chih [1 ]
Chen, Yen-Yang [2 ]
Wu, Yu-Jui [1 ]
Kao, Hsiang-Shun [1 ]
Harris, Charles Thomas [3 ]
Lu, Tzu-Ming
Li, Jiun-Yun [4 ,5 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 10617, Taiwan
[5] Taiwan Semicond Res Inst, Hsinchu 30078, Taiwan
关键词
C-V characteristics; surface tunneling; undoped Si/SiGe heterostructure; DATA RETENTION; SPIN QUBIT; QUANTUM; OXIDE;
D O I
10.1109/TED.2021.3138363
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Capacitance-voltage (C-V) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T= 4 - 35 K are presented. Two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 x 10(5); cm(2)/V.s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.
引用
收藏
页码:482 / 486
页数:5
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