Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

被引：78

作者：

Liu, ZC ^{[1
]}

Shen, WH ^{[1
]}

Bu, WB ^{[1
]}

Chen, HR ^{[1
]}

Hua, ZL ^{[1
]}

Zhang, LX ^{[1
]}

Li, L ^{[1
]}

Shi, JL ^{[1
]}

Tan, SH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

MICROPOROUS AND MESOPOROUS MATERIALS | 2005年 / 82卷 / 1-2期

基金：

中国博士后科学基金;

关键词：

nanocrystalline; beta-SiC; mesoporosity; low-temperature formation; mesoporous carbon; Si powder;

D O I：

10.1016/j.micromeso.2005.02.022

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

We report here a new route to prepare nanocrystalline beta-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 degrees C, which is below the melting point of silicon, 1420 degrees C. The SiC samples were characterized by XRD, SEM, TEM, N-2 adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m(2) g(-1) and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 degrees C was also brought into comparison. (c) 2005 Elsevier Inc. All rights reserved.

引用

页码：137 / 145

页数：9

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