Selective area growth of GaP on Si by MOCVD

Single crystals of Gap were grown on 4 degrees miscut (100) Si substrates by selective area metalorganic chemical vapor deposition. Silicon nitride patterns were used to mask the wafer; no GaP nucleated on the silicon nitride patterns. The top and side walls of the selectively grown Gap stripes (3 mu m width) seem to be the (100) and (111) crystal planes. Cross-sectional TEM analysis revealed a smooth GaP-Si interface. Focused Raman spectroscopy with a spatial resolution of similar to 1 mu m was used to assess the crystal quality of individual Gap mesas.