Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

被引：16

作者：

Abe, Shunsuke ^{[1
]}

Handa, Hiroyuki ^{[1
]}

Takahashi, Ryota ^{[1
]}

Imaizumi, Kei ^{[1
]}

Fukidome, Hirokazu ^{[1
]}

Suemitsu, Maki ^{[1
,2
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 12期

基金：

日本科学技术振兴机构;

关键词：

Graphene; 3C-SiC(111); Si(111); Epitaxy; Surface termination; DESORPTION; HYDROGEN;

D O I：

10.1007/s11671-010-9731-x

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6 root 3 x 6 root 3)R30 degrees reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.

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收藏

页码：1888 / 1891

页数：4

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