3D-analysis of semiconductor structures by electron tomography

被引：17
作者：
Bender, H.
Richard, O.
Kalio, A.
Sourty, E.
机构：
[1] IMEC, BE-3001 Louvain, Belgium
[2] FEI, NL-5651 GG Eindhoven, Netherlands
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 11期
关键词：
transmission electron microscopy; electron tomography; nano-devices;
D O I：
10.1016/j.mee.2007.05.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis of advanced nano-devices by the classical 2D imaging with transmission or scanning transmission electron microscopy suffers from projection effects over the sample thickness that result in e.g. blurring due to interfacial roughness or superposition of different structures. Electron tomography allows to overcome these problems. The method involves the acquisition of tilted series of 2D-images, the accurate alignment of these images and the 3D volume reconstruction. Slicing in any direction through this volume yields sections through the device structure with resolution of a few nanometer. The methodology is discussed and illustrated with some case studies. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：2707 / 2713
页数：7
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