Geometry-dependent terahertz emission of silicon nanowires

被引：44

作者：

Jung, Gyeong Bok ^{[1
]}

Cho, Yong Jae ^{[1
]}

Myung, Yoon ^{[1
]}

Kim, Han Sung ^{[1
]}

Seo, Young Suk ^{[1
]}

Park, Jeunghee ^{[1
]}

Kang, Chul ^{[2
]}

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Adv Photon Res Inst, Kwangju 500712, South Korea

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 16期

关键词：

ARRAYS;

D O I：

10.1364/OE.18.016353

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

THz emission was observed from the vertically aligned silicon nanowire (Si NW) arrays, upon the excitation using a fs Ti-sapphire laser pulse (800 nm). The Si NWs (length = 0.3 similar to 9 mu m) were synthesized by the chemical etching of n-type silicon substrates. The THz emission exhibits significant length dependence; the intensity increases sharply up to a length of 3 mu m and then almost saturates. Their efficient THz emission is attributed to strong local field enhancement by coherent surface plasmons, with distinctive geometry dependence. (C) 2010 Optical Society of America

引用

页码：16353 / 16359

页数：7

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