Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous low-energy ion bombardment of the growth surface

被引：0

作者：

Shengurov, SG ^{[1
]}

Shabanov, VN ^{[1
]}

Shabanov, AV ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, NI Lobachevskii Physicotech Sci Res Inst, Nizhnii Novgorod, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 04期

关键词：

Silicon; Gallium; Antimony; Molecular Beam Epitaxy; Molecular Beam;

D O I：

10.1134/1.1261843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that high-quality structures may be fabricated by applying a potential to the substrate to obtain n- and p-type delta-layers during low-temperature growth of epitaxial layers from subliming silicon sources doped with antimony or gallium. (C) 1997 American Institute of Physics. [S1063-7850(97)01204-4].

引用

页码：281 / 283

页数：3