Oxygen induced strong mobility modulation in few-layer black phosphorus

被引:10
作者
Han, Cheng [1 ,2 ,3 ,4 ]
Hu, Zehua [3 ,4 ]
Carvalho, Alexandra [4 ]
Guo, Na [3 ,4 ]
Zhang, Jialin [2 ,3 ]
Hu, Fang [2 ,5 ]
Xiang, Du [2 ,3 ]
Wu, Jing [6 ]
Lei, Bo [3 ,4 ]
Wang, Li [7 ,8 ]
Zhang, Chun [3 ,4 ]
Neto, A. H. Castro [3 ,4 ]
Chen, Wei [1 ,2 ,3 ,4 ,9 ]
机构
[1] Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China
[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[4] Natl Univ Singapore, Ctr Adv Mat & Graphene Res Ctr 2D, 6 Sci Dr 2, Singapore 117546, Singapore
[5] Zhejiang Univ, Ningbo Inst Technol, Ningbo 315100, Zhejiang, Peoples R China
[6] Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore
[7] Nanchang Univ, Inst Adv Study, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China
[8] Nanchang Univ, Dept Phys, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China
[9] Natl Univ Singapore Suzhou, Res Inst, 377 Lin Quan St,Suzhou Ind Pk, Jiangsu 215123, Peoples R China
来源
2D MATERIALS | 2017年 / 4卷 / 02期
关键词
black phosphorus; oxygen physisorption; mobility modulation; field-effect transistors; photoinduced oxidization; FIELD-EFFECT TRANSISTORS; X-RAY PHOTOELECTRON; TRANSPORT-PROPERTIES; CRYSTAL-STRUCTURE; SYSTEMS; PSEUDOPOTENTIALS; PHOTOOXIDATION; SPECTROSCOPY; PASSIVATION; MODEL;
D O I
10.1088/2053-1583/aa59ce
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
2D black phosphorus configured field-effect transistors generally show a hole-transport-dominated ambipolar characteristic, owing to the severely restricted electron mobility by air ambient. Here, we demonstrate the strongly modulated mobility of few-layer black phosphorus in contact with oxygen. Pure oxygen exposure can dramatically decrease the electron mobility of black phosphorus by over three orders of magnitudes without degrading the hole transport. In situ x-ray photoelectron spectroscopy characterization reveals the physisorption nature of oxygen on black phosphorus. Density functional theory calculations identify the unoccupied states of molecular oxygen physisorbed on few-layer black phosphorus, that serves as electron trap but not as hole trap, consistent with the aforementioned mobility modulation. In contrast, oxygen exposure upon light illumination exhibits a significant attenuation for both electron and hole transport, originating from the photoactivated oxidation of black phosphorus, as corroborated by in situ x-ray photoelectron spectroscopy measurements. Our findings clarify the predominant role of oxygen in modulating transport properties of black phosphorus, thereby providing deeper insight to the design of black phosphorus based complementary electronics.
引用
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页数:8
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