Microwave dielectric properties and sintering behavior of nano-scaled (α plus θ)-Al2O3 ceramics

被引:18
作者
Huang, Cheng-Liang [1 ]
Wang, Jun-Jie [1 ]
Yen, Fu-Su [2 ]
Huang, Chi-Yuen [2 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Resources Engn, Tainan 70101, Taiwan
关键词
ceramics; oxides; crystal growth; dielectric properties;
D O I
10.1016/j.materresbull.2007.06.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric properties at microwave frequencies and the microstructures of nano (alpha + theta)-Al2O3 ceramics were investigated. Using the high-purity nano (alpha + theta)-Al2O3 powders can effectively increase the value of the quality factor and lower the sintering temperature of the ceramic samples. Grain growth can be limited with theta-phase Al2O3 addition and high-density alumina ceramics can be obtained with smaller grain size comparing to pure alpha-Al2O3. Relative density of sintered samples can be as high as 99.49% at 1400 degrees C for 8 h. The unloaded quality factors Q x f are strongly dependent on the sintering time. Further improvement of the Q x f value can be achieved by extending the sintering time to 8 h. A dielectric constant (Er) Of 10, a high Q x f value of 634,000 GHz (measured at 14 GHz) and a temperature coefficient of resonant frequency (tau(f)) of -39.88 ppm/degrees C were obtained for specimen sintered at 1400 degrees C for 8 h. Sintered ceramic samples were also characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1463 / 1471
页数:9
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