High performance photodetector based on graphene/MoS2/graphene lateral heterostrurcture with Schottky junctions

被引：69

作者：

Liu, Beiyun ^{[1
,2
]}

Chen, Yongfeng ^{[1
,2
]}

You, Congya ^{[1
,2
]}

Liu, Yawei ^{[1
,2
]}

Kong, Xinyi ^{[1
,2
]}

Li, Jingfeng ^{[1
,2
]}

Li, Songyu ^{[1
,2
,3
]}

Deng, Wenjie ^{[1
,2
]}

Li, Yufo ^{[1
,2
]}

Yan, Hui ^{[1
,2
]}

Zhang, Yongzhe ^{[1
,2
]}

机构：

[1] Beijing Univ Technol, Coll Mat Sci & Technol, Beijing 100124, Peoples R China

[2] Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ China, Beijing 100124, Peoples R China

[3] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100083, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 779卷

基金：

中国国家自然科学基金;

关键词：

Photodetector; Heterostructure; Two-dimensional materials; 2-DIMENSIONAL MATERIALS; LAYER MOS2; GRAPHENE; PHOTOLUMINESCENCE; HETEROSTRUCTURES; TRANSITION; PHOTOTRANSISTORS; PHOTORESPONSE; DEPOSITION; FILMS;

D O I：

10.1016/j.jallcom.2018.11.165

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene and other two-dimensional (2D) materials have emerged as promising materials for future optoelectric applications. However, low detectivity of two-dimensional materials based photodetector inhibits their application. Here, we report a lateral graphene/MoS2/graphene (GMG) heterostructure photodetector which was synthesized by chemical vapor disposition (CVD). Electrical measurement shows that on/off ratio is up to 10(6) and two opposing Schottky junctions are connected in a series. Photocurrent mapping indicates that the Schottky junctions formed by graphene and MoS2 are the core part of the device, where photoexcited electron-hole pairs are spontaneously and rapidly separated. The responsivity is more than 2 x 10(3)mA/W and the maximum specific detectivity is as high as 10(13) Jones, respectively. This special design for the 2D materials based photodetector with high detectivity gives great potential for future application in nano-optoelectronic devices. (C) 2018 Published by Elsevier B.V.

引用

页码：140 / 146

页数：7

共 52 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/NNANO.2010.132, 10.1038/nnano.2010.132]

[2] Charge Photogeneration in Few-Layer MoS2 [J].

Borzda, Tetiana ;

Gadermaier, Christoph ;

Vujicic, Natasa ;

Topolovsek, Peter ;

Borovsak, Milos ;

Mertelj, Tomaz ;

Viola, Daniele ;

Manzoni, Cristian ;

Pogna, Eva A. A. ;

Brida, Daniele ;

Antognazza, Maria Rosa ;

Scotognella, Francesco ;

Lanzani, Guglielmo ;

Cerullo, Giulio ;

Mihailovic, Dragan .

ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (22) :3351-3358

[3] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].

Britnell, L. ;

Ribeiro, R. M. ;

Eckmann, A. ;

Jalil, R. ;

Belle, B. D. ;

Mishchenko, A. ;

Kim, Y. -J. ;

Gorbachev, R. V. ;

Georgiou, T. ;

Morozov, S. V. ;

Grigorenko, A. N. ;

Geim, A. K. ;

Casiraghi, C. ;

Castro Neto, A. H. ;

Novoselov, K. S. .

SCIENCE, 2013, 340 (6138) :1311-1314

[4] Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors [J].

Buscema, Michele ;

Groenendijk, Dirk J. ;

Blanter, Sofya I. ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

NANO LETTERS, 2014, 14 (06) :3347-3352

[5] High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].

Das, Saptarshi ;

Chen, Hong-Yan ;

Penumatcha, Ashish Verma ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (01) :100-105

[6] Photoluminescence from Chemically Exfoliated MoS2 [J].

Eda, Goki ;

Yamaguchi, Hisato ;

Voiry, Damien ;

Fujita, Takeshi ;

Chen, Mingwei ;

Chhowalla, Manish .

NANO LETTERS, 2011, 11 (12) :5111-5116

[7] Raman spectroscopy as a versatile tool for studying the properties of graphene [J].

Ferrari, Andrea C. ;

Basko, Denis M. .

NATURE NANOTECHNOLOGY, 2013, 8 (04) :235-246

[8] Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors [J].

Hafeez, Muhammad ;

Gan, Lin ;

Li, Huiqiao ;

Ma, Ying ;

Zhai, Tianyou .

ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (25) :4551-4560

[9] Richardson constant and electrostatics in transfer-free CVD grown few-layer MoS2/graphene barristor with Schottky barrier modulation >0.6eV [J].

Jahangir, Ifat ;

Uddin, M. Ahsan ;

Singh, Amol K. ;

Koley, Goutam ;

Chandrashekhar, M. V. S. .

APPLIED PHYSICS LETTERS, 2017, 111 (14)

[10] High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping [J].

Kang, Dong-Ho ;

Kim, Myung-Soo ;

Shim, Jaewoo ;

Jeon, Jeaho ;

Park, Hyung-Youl ;

Jung, Woo-Shik ;

Yu, Hyun-Yong ;

Pang, Chang-Hyun ;

Lee, Sungjoo ;

Park, Jin-Hong .

ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (27) :4219-4227

← 1 2 3 4 5 6 →