Growth of 450 mm diameter semiconductor grade silicon crystals

被引：13

作者：

Lu, Zheng ^{[1
]}

Kimbel, Steven ^{[1
]}

机构：

[1] MEMC Elect Mat Inc, Crystal R&D Dept, St Peters, MO 63376 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Czochralski method; Single crystal growth; Semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2010.10.122

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Research and development of the next generation 450 mm semiconductor grade silicon crystal and related technology have been carried out in MEMC following the company's philosophy to stay one generation ahead on research and development. The first 450 mm dislocation free crystal was grown in early 2009 and the first 450 mm semiconductor wafer was produced shortly after. General challenges in crystal growth process, puller, and hot zone designs, as well as control, automation, and handling are discussed in this paper. General considerations on working with customers and equipment manufacturers on fundamental crystal and wafer quality characteristics are also discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：193 / 195

页数：3