Ge/SiGe RCE Photodetectors: A Comparative Study based on Franz-Keldysh Effect and Quantum Confined Stark Effect

被引：0
作者：
Sen, Gopa [1 ]
Mukhopadhyay, Bratati [1 ]
Basu, P. K. [1 ]
机构：
[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India
来源：
2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年
关键词：
electrorefraction; electroabsorption; exciton; MQW; QCSE; FKE; WELL STRUCTURES; HIGH-SPEED; SI; GE; GERMANIUM; SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using Ge/SiGe type I structure. Performance of photodetectors using strong Quntum Confined Stark Effect, and Franz-Keldysh Effect and properties related to photodetection paper.
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收藏
页码：167 / 170
页数：4
相关论文
共 14 条
  • [1] MODELING OF EXCITONIC ELECTROREFRACTION IN INGAASP MULTIPLE-QUANTUM WELLS
    BANDYOPADHYAY, A
    BASU, PK
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (11) : 2724 - 2730
  • [2] Basu P.K., 2003, THEORY OPTICAL PROCE
  • [3] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
    CHEMLA, DS
    MILLER, DAB
    SMITH, PW
    GOSSARD, AC
    WIEGMANN, W
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 265 - 275
  • [4] Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon
    Colace, L
    Masini, G
    Altieri, A
    Assanto, G
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1094 - 1096
  • [5] Si-based near infrared photodetectors operating at 10 Gbit/s
    Colace, Lorenzo
    Balbi, Michele
    Masini, Gianlorenzo
    Assanto, Gaetano
    Luan, Hsin-Chiao
    Kimerling, Lionel C.
    [J]. JOURNAL OF LUMINESCENCE, 2006, 121 (02) : 413 - 416
  • [6] High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation
    Dosunmu, OI
    Cannon, DD
    Emsley, MK
    Kimerling, LC
    Ünlü, MS
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (01) : 175 - 177
  • [7] Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
    Jutzi, M
    Berroth, M
    Wöhl, G
    Oehme, M
    Kasper, E
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (07) : 1510 - 1512
  • [8] Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
    Kuo, YH
    Lee, YK
    Ge, YS
    Ren, S
    Roth, JE
    Kamins, TI
    Miller, DAB
    Harris, JS
    [J]. NATURE, 2005, 437 (7063) : 1334 - 1336
  • [9] Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators
    Kuo, Yu-Hsuan
    Lee, Yong Kyu
    Ge, Yangsi
    Ren, Shen
    Roth, Jonathan E.
    Kamins, Theodore I.
    Miller, David A. B.
    Harris, James S., Jr.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) : 1503 - 1513
  • [10] High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si
    Okyay, Ali K.
    Nayfeh, Ammar M.
    Saraswat, Krishna C.
    Yonehara, Takao
    Marshall, Ann
    McIntyre, Paul C.
    [J]. OPTICS LETTERS, 2006, 31 (17) : 2565 - 2567
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