Ge/SiGe RCE Photodetectors: A Comparative Study based on Franz-Keldysh Effect and Quantum Confined Stark Effect

被引：0

作者：

Sen, Gopa ^{[1
]}

Mukhopadhyay, Bratati ^{[1
]}

Basu, P. K. ^{[1
]}

机构：

[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India

来源：

2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年

关键词：

electrorefraction; electroabsorption; exciton; MQW; QCSE; FKE; WELL STRUCTURES; HIGH-SPEED; SI; GE; GERMANIUM; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using Ge/SiGe type I structure. Performance of photodetectors using strong Quntum Confined Stark Effect, and Franz-Keldysh Effect and properties related to photodetection paper.

引用

页码：167 / 170

页数：4

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