Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 °C

被引：15

作者：

Bouguen, L. ^{[1
,2
]}

Contreras, S. ^{[1
,2
]}

Jouault, B. ^{[1
,2
]}

Konczewicz, L. ^{[1
,2
]}

Camassel, J. ^{[1
,2
]}

Cordier, Y. ^{[3
]}

Azize, M. ^{[3
]}

Chenot, S. ^{[3
]}

Baron, N. ^{[4
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 05, France

[2] CNRS, UMR 5650, F-34095 Montpellier, France

[3] CRHEA, CNRS, F-06560 Valbonne, France

[4] Picogiga Int, F-91971 Courtaboeuf, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2838301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics.

引用

页数：3

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