An 8-to 12-GHz wideband negative resistance reflection amplifier

被引：5

作者：

Chan, Pak ^{[1
]}

Fusco, V. ^{[1
]}

机构：

[1] Queens Univ Belfast, Inst Elect Commun & Informat Technol ECIT, Belfast, Antrim, North Ireland

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2012年 / 54卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

reflection amplifiers; transponders; RFID; bidirectional amplifier;

D O I：

10.1002/mop.26597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article describes the design and characterization of a wideband, 40% bandwidth microwave one port reflection amplifier.Experimental and simulation results are presented. The one port reflection amplifier uses a silicon bipolar transistor and demonstrates a return gain of better than 10 dB from 8 to 11.5 GHz. The gain of the refection amplifier can be easily DC modulated. In addition, a pair of reflection amplifiers is used to create a wideband bidirectional amplifier. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:553-555, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26597

引用

页码：553 / 555

页数：3

共 5 条

[1] Microwave reflection amplifier for detection and tagging applications [J].

Cantu, H. J. ;

Fusco, V. F. ;

Simms, S. .

IET MICROWAVES ANTENNAS & PROPAGATION, 2008, 2 (02) :115-119

[2] A novel bi-directional amplifier with applications in active Van Atta retrodirective arrays [J].

Chung, SJ ;

Chen, SM ;

Lee, YC .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) :542-547

[3] WIDEBAND GAAS GUNN REFLECTION AMPLIFICATION FOR 18-26.5 GHZ WAVEGUIDE BAND [J].

DEKONING, JG ;

GOLDWASSER, RE ;

HAMILTON, RJ ;

ROSZTOCZY, FE .

ELECTRONICS LETTERS, 1975, 11 (09) :195-196

[4] WIDE-BAND REFLECTION-TYPE TRANSFERRED ELECTRON AMPLIFIERS [J].

PERLMAN, BS ;

UPADHYAYULA, CL ;

MARX, RE .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :911-+

[5]

Van Atta L. C., 1959, U.S. patent, Patent No. 2908002

← 1 →