Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

被引：9
作者：
Durcan, Chris A. [1 ]
Balsano, Robert [1 ]
LaBella, Vincent P. [2 ,3 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[2] SUNY Albany, Coll Nanoscale Sci, Polytech Inst, Albany, NY 12203 USA
[3] SUNY Albany, Coll Engn, Polytech Inst, Albany, NY 12203 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 24期
基金：
美国国家科学基金会;
关键词：
TRANSPORT-PROPERTIES; SPECTROSCOPY; CONTACTS;
D O I：
10.1063/1.4922972
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over a period of 21 days to observe changes in the interface electrostatics. Initially, the average spectrum is fit to a Schottky barrier height of 0.71 eV, and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV, and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at the interface, which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period. (C) 2015 AIP Publishing LLC.
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页数：6
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