Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

被引：42

作者：

Hao, Guo-Dong ^{[1
]}

Taniguchi, Manabu ^{[1
]}

Tamari, Naoki ^{[1
,2
]}

Inoue, Shin-ichiro ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol NICT, Adv ICT Res Inst, Kobe, Hyogo 6512492, Japan

[2] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 03期

基金：

日本科学技术振兴机构;

关键词：

deep-ultraviolet; light-emitting diodes; optoelectronics; optical devices;

D O I：

10.1088/1361-6463/aa9e0e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

引用

页数：5

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