Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3

被引：71

作者：

Zhang, J

Peng, XS

Wang, XF

Wang, YW

Zhang, LD

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] Yantai Univ, Dept Phys, Yantai 264005, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 345卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(01)00905-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ordered crystalline GaN nanowires embedded in the nanochannels of anodic alumina membrane (AAM) were achieved by direct reaction Ga with NH3. The impact of reaction temperatures on Raman spectroscopic properties of GaN nanowires is investigated. X-ray diffraction and transmission electron microscopy (TEM) observations demonstrate that the crystalline GaN nanowires have hexagonal wurtzite structure. The hexagonal wurtzite structure GaN nanowires prepared at 960 degreesC are about 40 nm in diameter and up to several hundreds of micrometers in length. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：372 / 376

页数：5

共 22 条

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