Structural properties of MnAs epitaxial films on GaAs:: an in situ x-ray study

被引：5
作者：
Jenichen, B [1 ]
Satapathy, DK [1 ]
Braun, W [1 ]
Kaganer, VM [1 ]
Daweritz, L [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2005年 / 38卷 / 10A期
关键词：
D O I：
10.1088/0022-3727/38/10A/032
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an analysis of the relaxation of thin MnAs films on GaAs(001) by x-ray grazing incidence diffraction during molecular beam epitaxy. Separate in-plane peaks of the MnAs layer and the GaAs substrate are detected for average thicknesses starting from approximate to 1 monolayer indicating the formation of a relaxed MnAs lattice. The variation of position of the MnAs peaks during growth yields the time dependence of relaxation. MnAs domains of different orientations are detected. A line broadening due to size and strain effects is observed. We find a regular arrangement of misfit dislocations at the interface. The range of twist of the domains reduces during growth indicating an improvement of the epitaxy.
引用
收藏
页码：A169 / A173
页数：5
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