Structural properties of MnAs epitaxial films on GaAs:: an in situ x-ray study

被引：5
|
作者：
Jenichen, B [1 ]
Satapathy, DK [1 ]
Braun, W [1 ]
Kaganer, VM [1 ]
Daweritz, L [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2005年 / 38卷 / 10A期
关键词：
D O I：
10.1088/0022-3727/38/10A/032
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an analysis of the relaxation of thin MnAs films on GaAs(001) by x-ray grazing incidence diffraction during molecular beam epitaxy. Separate in-plane peaks of the MnAs layer and the GaAs substrate are detected for average thicknesses starting from approximate to 1 monolayer indicating the formation of a relaxed MnAs lattice. The variation of position of the MnAs peaks during growth yields the time dependence of relaxation. MnAs domains of different orientations are detected. A line broadening due to size and strain effects is observed. We find a regular arrangement of misfit dislocations at the interface. The range of twist of the domains reduces during growth indicating an improvement of the epitaxy.
引用
收藏
页码：A169 / A173
页数：5
相关论文
共 50 条
  • [21] Stress-modified structural and electronic properties of epitaxial MnAs layers on GaAs
    Takagaki, Y.
    Herrmann, C.
    Herfort, J.
    Hucho, C.
    Friedland, K. -J.
    PHYSICAL REVIEW B, 2008, 78 (23)
  • [22] Modelization of epitaxial GaAs X-ray detectors
    Mañez, N
    Sun, GC
    Ben Choulkha, M
    Algani, C
    Alquié, G
    Verdeil, C
    Talbi, N
    Khirouni, K
    Bourgoin, JC
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (10) : 1498 - 1503
  • [23] Suitability of epitaxial GaAs for x-ray imaging
    Sun, GC
    Talbi, N
    Verdeil, C
    Bourgoin, JC
    APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2399 - 2401
  • [24] EPITAXIAL-GROWTH AND X-RAY STRUCTURAL CHARACTERIZATION OF ZN1-XFEXSE FILMS ON GAAS(001)
    JONKER, BT
    QADRI, SB
    KREBS, JJ
    PRINZ, GA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1946 - 1949
  • [25] Low-energy electron microscopy/x-ray magnetic circular dichroism photoemission electron microscopy study of epitaxial MnAs on GaAs
    Bauer, E
    Cherifi, S
    Daeweritz, L
    Kaestner, M
    Heun, S
    Locatelli, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2539 - 2542
  • [26] In situ grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A
    Satapathy, DK
    Jenichen, B
    Braun, W
    Kaganer, VM
    Daeweritz, L
    Ploog, KH
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (10A) : A164 - A168
  • [27] X-ray scattering and absorption studies of MnAs thin films grown by MBE on GaAs(001) substrates
    Huang, S
    Ming, ZH
    Soo, YL
    Kao, YH
    Tanaka, M
    Munekata, H
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 29 - 34
  • [28] In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)
    Takahasi, M.
    Nakata, Y.
    Suzuki, H.
    Ikeda, K.
    Kozu, M.
    Hu, W.
    Ohshita, Y.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 34 - 36
  • [29] X-ray and γ-ray detectors based on GaAs epitaxial structures
    Ayzenshtat, GI
    Germogenov, VP
    Guschin, SM
    Okaevich, LS
    Shmakov, OG
    Tolbanov, OP
    Vorobiev, AP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2): : 97 - 102
  • [30] X-RAY STUDY OF MANGANESE FERRITE EPITAXIAL-FILMS
    KARTASHEV, VS
    KARPASYUK, VK
    ORLOV, GN
    SHCHEPETKIN, AA
    INORGANIC MATERIALS, 1986, 22 (12) : 1820 - 1822
12345