Study of chemical cutting process in narrow-gap semiconductors.

被引：0

作者：

Kravetskii, MY ^{[1
]}

Fomin, OV ^{[1
]}

机构：

[1] Inst Semicond Phys, Kyiv, Ukraine

来源：

FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 2001年 / 4355卷

关键词：

D O I：

10.1117/12.417802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For a case of chemical reactions of the first order the mathematical model of process of chemical cutting of crystals is advanced. It is showed, that the return speed of chemical cutting is equal to the sum of return speeds of such values, as velocity of a chemical reaction, velocity of delivery etchant and speed of diffusion of molecules of a reactant. At research of process of chemical cutting of crystals InSb the satisfactory coordination between experimental and theoretical results is obtained. The developed model can be used at designing of the equipment and for optimization of process of chemical cut.

引用

页码：299 / 304

页数：4

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