Defect-driven inhomogeneities in Ni/4H-SiC Schottky barriers

被引：45

作者：

Tumakha, S ^{[1
]}

Ewing, DJ

Porter, LM

Wahab, Q

Ma, X

Sudharshan, TS

Brillson, LJ

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[4] MaxMile Technol LLC, Lexington, SC 29072 USA

[5] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[6] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[7] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[8] Ohio State Univ, Mat Res Ctr, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2141719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65 eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

引用

页码：1 / 3

页数：3

共 27 条

[1] Defects in 4H silicon carbide [J].

Bergman, JP ;

Storasta, L ;

Carlsson, FHC ;

Sridhara, S ;

Magnusson, B ;

Janzen, E .

PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) :675-679

[2] Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films [J].

Brillson, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1762-1768

[3] Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC [J].

Carlos, WE ;

Glaser, ER ;

Shanabrook, BV .

PHYSICA B-CONDENSED MATTER, 2003, 340 :151-155

[4]

Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO

[5]

2-0

[6] The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype [J].

Davydov, SY ;

Lebedev, AA ;

Posrednik, OV ;

Tairov, YM .

SEMICONDUCTORS, 2001, 35 (12) :1375-1377

[7] Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts [J].

Defives, D ;

Noblanc, O ;

Dua, C ;

Brylinski, C ;

Barthula, M ;

Meyer, F .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :395-401

[8] Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD [J].

Hallin, C ;

Wahab, Q ;

Ivanov, I ;

Bergman, P ;

Janzén, E .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :193-196

[9]

Itoh A, 1997, PHYS STATUS SOLIDI A, V162, P389, DOI 10.1002/1521-396X(199707)162:1<389::AID-PSSA389>3.0.CO

[10]

2-X

← 1 2 3 →