Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon

被引：52

作者：

Lever, L. ^{[1
]}

Hu, Y. ^{[2
]}

Myronov, M. ^{[3
]}

Liu, X. ^{[3
]}

Owens, N. ^{[2
]}

Gardes, F. Y. ^{[2
]}

Marko, I. P. ^{[2
]}

Sweeney, S. J. ^{[2
]}

Ikonic, Z. ^{[1
]}

Leadley, D. R. ^{[3
]}

Reed, G. T. ^{[2
]}

Kelsall, R. W. ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England

[2] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

OPTICS LETTERS | 2011年 / 36卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

ALLOYS; DESIGN; GE; SI;

D O I：

10.1364/OL.36.004158

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report modulation of the absorption coefficient at 1: 3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si(0.22)Ge(0.78) buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315nm. (C) 2011 Optical Society of America

引用

页码：4158 / 4160

页数：3

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