Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO2 films thermally grown using ion beam analyses

被引：2

作者：

Correa, S. A. ^{[1
]}

Soares, G. V. ^{[2
]}

Radtke, C. ^{[3
]}

Stedile, F. C. ^{[1
,3
]}

机构：

[1] Univ Fed Rio Grande do Sul, PGMICRO, BR-91509900 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[3] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 273卷

关键词：

Silicon carbide; Silicon; SiO2; Water vapor; Nuclear reaction analysis;

D O I：

10.1016/j.nimb.2011.07.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The incorporation of water vapor in SiO2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium (H-2 or D) and in 180 was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO2 films. However, in SiO2/Si. D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO2/Si. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：139 / 141

页数：3

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