Temperature measurement in a silicon carbide light emitting diode by Raman scattering

被引：11

作者：

Harima, H ^{[1
]}

Hosoda, T ^{[1
]}

Nakashima, S ^{[1
]}

机构：

[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 03期

关键词：

light-emitting diode (LED); Raman scattering; silicon carbide (SiC);

D O I：

10.1007/s11664-999-0003-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature of the light-emitting layer reached 350 degrees C at a current density of similar to 200 A/cm(2).

引用

页码：141 / 143

页数：3

共 6 条

[1] ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON [J].

BALKANSKI, M ;

WALLIS, RF ;

HARO, E .

PHYSICAL REVIEW B, 1983, 28 (04) :1928-1934

[2] Electronic properties of doped SiC at elevated temperatures studied by Raman scattering [J].

Harima, H ;

Hosoda, T ;

Nakashima, S .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :449-454

[3]

NAKATA T, 1989, SPRING P PHYS AM CRY, V43

[4] TEMPERATURE-DEPENDENCE OF THE OPTICAL PHONONS AND TRANSVERSE EFFECTIVE CHARGE IN 3C-SIC [J].

OLEGO, D ;

CARDONA, M .

PHYSICAL REVIEW B, 1982, 25 (06) :3889-3896

[5] THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND [J].

SLACK, GA .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3460-+

[6]

1998, T 4 INT HIGH TEMP EL

← 1 →