Ultrafast carrier dynamics near the Si(100)2x1 surface

被引：24
作者：
Jeong, S
Bokor, J
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.59.4943
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a time-resolved photoemission study of carrier dynamics near the Si(100)2x1 surface. It is found that the dominant contribution to the photoemission process originates from defect states on the Si(100)2x1 surface. Enhanced optical absorption is observed for these defect slates and carrier exchange between these states and the bulk is observed. The electron density near the surface and the shape of the electron energy distribution are found to change on a very fast time scale. A simple theoretical model is established to extract transport parameters from the observed electron energy distribution. [S0163-1829(99)07107-6].
引用
收藏
页码：4943 / 4951
页数：9
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