Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs

被引：14

作者：

Fang, Wen ^{[1
,2
,3
]}

Simoen, Eddy ^{[2
]}

Arimura, Hiroaki ^{[2
]}

Mitard, Jerome ^{[2
]}

Sioncke, Sonja ^{[2
]}

Mertens, Hans ^{[2
]}

Mocuta, Anda ^{[2
]}

Collaert, Nadine ^{[2
]}

Luo, Jun ^{[4
]}

Zhao, Chao ^{[4
]}

Thean, Aaron Voon-Yew ^{[2
]}

Claeys, Cor ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[4] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100190, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 07期

关键词：

1/f noise; Ge MOSFETs; FLICKER NOISE; 1/F NOISE; GATE; PERFORMANCE; PMOSFETS;

D O I：

10.1109/TED.2015.2430367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gate-stack quality of planar MOSFETs fabricated in Ge-on-Si substrates and passivated by a GeOx interfacial layer is evaluated by low-frequency noise analysis. It is shown that for both n- and p-channel transistors predominantly 1/f. noise (gamma similar to 1) has been observed, which originates from number and correlated mobility fluctuations. The oxide trap density and mobility scattering coefficient derived from the input-referred voltage noise power spectral density are demonstrated to be significantly higher for nMOSFETs than for pMOSFETs with the same gate-stack, which explains the low electron mobility.

引用

页码：2078 / 2083

页数：6

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