Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs

被引：13
作者：
Fang, Wen [1 ,2 ,3 ]
Simoen, Eddy [2 ]
Arimura, Hiroaki [2 ]
Mitard, Jerome [2 ]
Sioncke, Sonja [2 ]
Mertens, Hans [2 ]
Mocuta, Anda [2 ]
Collaert, Nadine [2 ]
Luo, Jun [4 ]
Zhao, Chao [4 ]
Thean, Aaron Voon-Yew [2 ]
Claeys, Cor [2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
[4] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100190, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 07期
关键词：
1/f noise; Ge MOSFETs; FLICKER NOISE; 1/F NOISE; GATE; PERFORMANCE; PMOSFETS;
D O I：
10.1109/TED.2015.2430367
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate-stack quality of planar MOSFETs fabricated in Ge-on-Si substrates and passivated by a GeOx interfacial layer is evaluated by low-frequency noise analysis. It is shown that for both n- and p-channel transistors predominantly 1/f. noise (gamma similar to 1) has been observed, which originates from number and correlated mobility fluctuations. The oxide trap density and mobility scattering coefficient derived from the input-referred voltage noise power spectral density are demonstrated to be significantly higher for nMOSFETs than for pMOSFETs with the same gate-stack, which explains the low electron mobility.
引用
收藏
页码：2078 / 2083
页数：6
相关论文
共 27 条
  • [1] High FET Performance for a Future CMOS GeO2-Based Technology
    Bellenger, Florence
    De Jaeger, Brice
    Merckling, Clement
    Houssa, Michel
    Penaud, Julien
    Nyns, Laura
    Vrancken, Evi
    Caymax, Matty
    Meuris, Marc
    Hoffmann, Thomas
    De Meyer, Kristin
    Heyns, Marc
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 402 - 404
  • [2] The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
    Caymax, Matty
    Leys, Frederik
    Mitard, Jerome
    Martens, Koen
    Yang, Lijun
    Pourtois, Geoffrey
    Vandervorst, Wilfried
    Meuris, Marc
    Loo, Roger
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (12) : H979 - H985
  • [3] Status and Trends in Ge CMOS Technology
    Claeys, C.
    Mitard, J.
    Hellings, G.
    Eneman, G.
    De Jaeger, B.
    Witters, L.
    Loo, R.
    Delabie, A.
    Sioncke, S.
    Caymax, M.
    Simoen, E.
    [J]. 2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4), 2013, 54 (01): : 25 - 37
  • [4] Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
    Delabie, Annelies
    Bellenger, Florence
    Houssa, Michel
    Conard, Thierry
    Van Elshocht, Sven
    Caymax, Matty
    Heyns, Marc
    Meuris, Marc
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (08)
  • [5] Franco J, 2014, INT INTEG REL WRKSP, P53, DOI 10.1109/IIRW.2014.7049510
  • [6] Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks
    Franco, J.
    Kaczer, B.
    Roussel, Ph. J.
    Mitard, J.
    Sioncke, S.
    Witters, L.
    Mertens, H.
    Grasser, T.
    Groeseneken, G.
    [J]. 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
  • [7] Electrical noise and RTS fluctuations in advanced CMOS devices
    Ghibaudo, G
    Boutchacha, T
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) : 573 - 582
  • [8] Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
    Guo, W.
    Nicholas, G.
    Kaczer, B.
    Todi, R. M.
    De Jaeger, B.
    Claeys, C.
    Mercha, A.
    Simoen, E.
    Cretu, B.
    Routoure, J. -M.
    Carin, R.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (04) : 288 - 291
  • [9] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 654 - 665
  • [10] Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs
    Ioannidis, E. G.
    Dimitriadis, C. A.
    Haendler, S.
    Bianchi, R. A.
    Jomaah, J.
    Ghibaudo, G.
    [J]. SOLID-STATE ELECTRONICS, 2012, 76 : 54 - 59
123