Formation of Cu(In,Ga)S2 chalcopyrite thin films following a 3-stage co-evaporation process

被引：13

作者：

Thomere, A. ^{[1
]}

Barreau, N. ^{[1
]}

Stephant, N. ^{[1
]}

Guillot-Deudon, C. ^{[1
]}

Gautron, E. ^{[1
]}

Caldes, M. T. ^{[1
]}

Lafond, A. ^{[1
]}

机构：

[1] Univ Nantes, Inst Mat Jean Rouxel, IMN, CNRS, F-44000 Nantes, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2022年 / 237卷

关键词：

Cu(In; Ga)S-2; Thin film; Co-evaporation; Solar cell; EFFICIENCIES;

D O I：

10.1016/j.solmat.2021.111563

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The study aims to investigate the origin of the crystalline and compositional bi-layered structure of CuIn1-xGaxS2 (CIGS) films we previously observed for samples deposited following the 3-stage process. Therefore, the growth of films of different gallium contents (i.e. x) was interrupted at key steps of the 3-stage, namely at the end of the first stage, after half of the second stage and at the end of third stage. Compositional, morphological and structural differences at each stage were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Scanning Transmission Electron Microscopy (STEM) and Energy Dispersive X-Ray Spectroscopy (EDX). From these investigations, we propose a model attributing composition plateaus to the formation of diverse Cu-poor crystalline phases during the second stage of the growth process.

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页数：7

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