Piezoresistance effect in p-type silicon

被引：0

作者：

Kanda, Y ^{[1
]}

Matsuda, K ^{[1
]}

机构：

[1] Kojundo Chem Lab Co Ltd, Sakado, Saitama 3500284, Japan

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Difference between unstrained heavy and light hole effective masses in the direction of applied strain obtained by D-K-K formula has correlated with the longitudinal piezoresistance (PR) coefficient but not with the transverse PR. Graphical representation of the longitudinal PR coefficients calculated by macroscopic fourth rank PR tensor has proved the fact.

引用

页码：79 / 80

页数：2

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