Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition

被引：11

作者：

Nakazawa, H. ^{[1
]}

Osozawa, R. ^{[1
]}

Okuzaki, T. ^{[1
]}

Sato, N. ^{[1
]}

Suemitsu, M. ^{[2
]}

Abe, T. ^{[3
]}

机构：

[1] Hirosaki Univ, Aomori 0368561, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[3] Tohoku Inst Technol, Sendai, Miyagi 9828577, Japan

来源：

关键词：

Diamond-like carbon; Pulsed laser deposition; Silicon; Hydrogen; CHEMICAL-VAPOR-DEPOSITION; TRIBOLOGICAL PROPERTIES; DLC FILMS; STRUCTURAL-PROPERTIES; THIN-FILMS; COATINGS; SP(3); FRICTION; GROWTH; CVD;

D O I：

10.1016/j.diamond.2011.01.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited unhydrogenated and hydrogenated Si-incorporated DLC (Si-DLC) films by pulsed laser deposition using KrF excimer laser, and systematically examined the structure and the mechanical and tribological properties of the films. Hydrogenated Si-DLC films were prepared by atomic-hydrogen irradiation during deposition. The Si/(Si+C) ratio in DLC films increased by atomic-hydrogen irradiation during deposition, indicating that the hydrogen etching is more effective for C atoms compared with Si atoms. The formation of Si-C bonds in the films and silicon oxides only at the surfaces was confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the atomic-hydrogen irradiation led to the formation of Si-H bonds to prevent the surface oxidation of the Si-DLC films. The scratch tests revealed that the critical loads of the films deposited with hydrogen were higher than those of the films deposited without hydrogen. We found that the moderately hydrogen-irradiated Si-DLC films tended to have higher wear resistance than the unhydrogenated Si-DLC films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：485 / 491

页数：7

共 38 条

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