Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide

被引：2

作者：

Qiao, Zhongliang ^{[1
]}

Li, Xiang ^{[2
,3
]}

Sia, Jia XuBrian ^{[2
]}

Wang, WanJun ^{[2
]}

Wang, Hong ^{[2
]}

Li, Lin ^{[1
]}

Li, Zaijin ^{[1
]}

Zhao, Zhibin ^{[1
]}

Liu, Guojun ^{[1
]}

Chen, Hao ^{[1
]}

Qu, Yi ^{[1
]}

Gao, Xin ^{[4
]}

Bo, Baoxue ^{[4
]}

Liu, Chongyang ^{[2
,3
]}

机构：

[1] Hainan Normal Univ, Sch Phys & Elect Engn, Key Lab Laser Technol & Optoelect Funct Mat Haina, Haikou 571158, Hainan, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Nanyang Technol Univ, Temasek Labs NTU TL NTU, Singapore 637553, Singapore

[4] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China

来源：

OPTICS AND LASER TECHNOLOGY | 2022年 / 147卷

基金：

新加坡国家研究基金会; 中国国家自然科学基金;

关键词：

Semiconductor lasers; Passively mode-locked lasers; Double quantum well lasers; Quantum wells; PULSE GENERATION; PEAK POWER; DIODE; AMPLIFIER;

D O I：

10.1016/j.optlastec.2021.107702

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on asymmetric waveguide with InGaAs/GaAs double quantum wells (DQW) passively mode-locked lasers (MLLs) grown in one epitaxial step. With systematic measurement of the performances of two-section MLLs, we found that the gain region current, absorber reverse bias voltage and operating temperature all have obvious modulation effects on the mode-locked frequency, line width, pulse width, emitting wavelength, and signal intensity of the MLL. Especially, the prepared device emitting at 1065.4 mu m exhibited similar to 396 fs of a pulse width at 12.155 GHz repetition rate, peak power of similar to 1.25 W under an ideal time bandwidth product (TBWP) at 20 degrees C. To our knowledge, it is the best value ever reported for DQW MLLs. And we obtained that the pulse width increase caused by the temperature rise should be in the range of 6.5-11.4 fs/degrees C, also found that the heat accumulation or thermal effect in the reverse bias section has a key influence on MLL. This is of great significance for us to improve the performance of MLL.

引用

页数：8

共 21 条

[1] Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms [J].

Aviles-Espinosa, Rodrigo ;

Filippidis, George ;

Hamilton, Craig ;

Malcolm, Graeme ;

Weingarten, Kurt J. ;

Suedmeyer, Thomas ;

Barbarin, Yohan ;

Keller, Ursula ;

Santos, Susana I. C. O. ;

Artigas, David ;

Loza-Alvarez, Pablo .

BIOMEDICAL OPTICS EXPRESS, 2011, 2 (04) :739-747

[2] Wavelength and repetition-rate tunable mode-locked semiconductor-seed-source for Yb-fiber-amplifier systems [J].

Budz, A. J. ;

Haugen, H. K. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (17-20) :1412-1414

[3]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[4] BANDWIDTH-LIMITED PICOSECOND PULSE GENERATION IN AN ACTIVELY MODE-LOCKED GAALAS DIODE-LASER [J].

HOLBROOK, MB ;

SLEAT, WE ;

BRADLEY, DJ .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :59-61

[5] Anticolliding design for monolithic passively mode-locked semiconductor lasers [J].

Javaloyes, J. ;

Balle, S. .

OPTICS LETTERS, 2011, 36 (22) :4407-4409

[6]

Javaloyes J., 2012, IEEE J. Quantum Electron., V48, P1519

[7] In vivo two-photon imaging of mouse hippocampal neurons in dentate gyrus using a light source based on a high-peak power gain-switched laser diode [J].

Kawakami, Ryosuke ;

Sawada, Kazuaki ;

Kusama, Yuta ;

Fang, Yi-Cheng ;

Kanazawa, Shinya ;

Kozawa, Yuichi ;

Sato, Shunichi ;

Yokoyama, Hiroyuki ;

Nemoto, Tomomi .

BIOMEDICAL OPTICS EXPRESS, 2015, 6 (03) :891-901

[8] Second harmonic pico-second pulse generation with mode-locked 1064nm DBR laser diodes [J].

Klehr, A. ;

Prziwarka, T. ;

Jedrzejczyk, D. ;

Brox, O. ;

Bugge, F. ;

Wenzel, H. ;

Paschke, K. ;

Erbert, G. ;

Traenkle, G. .

NOVEL IN-PLANE SEMICONDUCTOR LASERS XIII, 2014, 9002

[9] Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm [J].

Li, Xiang ;

Wang, Hong ;

Qiao, Zhongliang ;

Sia, Jia Xu Brian ;

Wang, Wanjun ;

Guo, Xin ;

Zhang, Yu ;

Niu, Zhichuan ;

Tong, Cunzhu ;

Liu, Chongyang .

APPLIED PHYSICS LETTERS, 2020, 117 (14)

[10] High-Performance Solar Steam Device with Layered Channels: Artificial Tree with a Reversed Design [J].

Liu, He ;

Chen, Chaoji ;

Chen, Guang ;

Kuang, Yudi ;

Zhao, Xinpeng ;

Song, Jianwei ;

Jia, Chao ;

Xu, Xu ;

Hitz, Emily ;

Xie, Hua ;

Wang, Sha ;

Jiang, Feng ;

Li, Tian ;

Li, Yiju ;

Gong, Amy ;

Yang, Ronggui ;

Das, Siddhartha ;

Hu, Liangbing .

ADVANCED ENERGY MATERIALS, 2018, 8 (08)

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