Effects of an in-situ SiNx interlayer on structural and optical properties for nonpolar a-plane GaN epilayers

被引：7

作者：

Zhao, Jianguo ^{[1
]}

Zhang, Xiong ^{[2
]}

Fan, Aijie ^{[2
]}

Chen, Shuai ^{[2
]}

He, Jiaqi ^{[2
]}

Pan, Jiangyong ^{[1
]}

Chen, Daihua ^{[3
]}

Tian, Ming ^{[3
]}

Feng, Zhe Chuan ^{[3
]}

Chang, Jianhua ^{[1
]}

Liu, Qingquan ^{[1
]}

Ge, Junxiang ^{[1
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Sch Elect & Informat Engn, Nanjing 210044, Peoples R China

[2] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

[3] Guangxi Univ, Lab Optoelect Mat & Detect Technol, Nanning 530004, Guangxi, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 01期

关键词：

STACKING-FAULTS; EPI-LAYERS; REDUCTION; SAPPHIRE; ANISOTROPY; GROWTH; FILMS;

D O I：

10.7567/1347-4065/ab6004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and optical properties for a nonpolar GaN epilayer grown with an in situ SiNx interlayer was studied intensively. The superficial defects were decreased by 83% and root-mean-square was reduced by 61% for nonpolar GaN with an SiNx interlayer. The in situ SiNx was revealed to be powerful to block basal-plane stacking faults (BSFs) in nonpolar GaN because BSF density was reduced from 1.83 x 10(5) to 8.13 x 10(4) cm(-1) and BSF-related emission was remarkably suppressed by the SiNx interlayer. Moreover, the fast decay lifetime increased from 16.2 to 71.1 ps, which implied the non-radiative recombination in nonpolar GaN was significantly suppressed after the insertion of the SiNx layer.

引用

页数：4

共 30 条

[1] Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN -: art. no. 045213
Arnaudov, B
Paskova, T
Goldys, EM
Evtimova, S
Monemar, B
[J]. PHYSICAL REVIEW B, 2001, 64 (04):
[2] Spontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F
Fiorentini, V
Vanderbilt, D
[J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
[3] GaN FETs for microwave and high-temperature applications
Binari, SC
Doverspike, K
Kelner, G
Dietrich, HB
Wickenden, AE
[J]. SOLID-STATE ELECTRONICS, 1997, 41 (02) : 177 - 180
[4] Reduction of stacking faults in (1120) and (1122) GaN films by ELO techniques and benefit on GaN wells emission
Bougrioua, Z.
Laugt, M.
Vennegues, P.
Cestier, I.
Guhne, T.
Frayssinet, E.
Gibart, P.
Leroux, M.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01): : 282 - 289
[5] Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask
Chakraborty, Arpan
Kim, K. C.
Wu, F.
Speck, J. S.
DenBaars, S. P.
Mishra, U. K.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
[6] Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
Corfdir, P.
Lefebvre, P.
Balet, L.
Sonderegger, S.
Dussaigne, A.
Zhu, T.
Martin, D.
Ganiere, J. -D.
Grandjean, N.
Deveaud-Pledran, B.
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)
[7] Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure
Deguchi, T
Sekiguchi, K
Nakamura, A
Sota, T
Matsuo, R
Chichibu, S
Nakamura, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (8B): : L914 - L916
[8] Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503
[9] Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Gundimeda, Abhiram
Krishna, Shibin
Aggarwal, Neha
Sharma, Alka
Sharma, Nita Dilawar
Maurya, K. K.
Husale, Sudhir
Gupta, Govind
[J]. APPLIED PHYSICS LETTERS, 2017, 110 (10)
[10] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
Hirayama, Hideki
Maeda, Noritoshi
Fujikawa, Sachie
Toyoda, Shiro
Kamata, Norihiko
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)

← 1 2 3 →